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NTD110N02R, STD110N02R
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage (Note 3)
(V GS = 0 V, I D = 250 m A)
Positive Temperature Coefficient
Zero Gate Voltage Drain Current
(V DS = 20 V, V GS = 0 V)
(V DS = 20 V, V GS = 0 V, T J = 125 ° C)
Gate ? Body Leakage Current (V GS = ± 20 V, V DS = 0 V)
V (BR)DSS
I DSS
I GSS
24
28
15
1.5
10
± 100
V
mV/ ° C
m A
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(V DS = V GS , I D = 250 m A)
Negative Threshold Temperature Coefficient
Static Drain ? to ? Source On ? Resistance (Note 3)
(V GS = 10 V, I D = 110 A)
(V GS = 4.5 V, I D = 55 A)
(V GS = 10 V, I D = 20 A)
(V GS = 4.5 V, I D = 20 A)
Forward Transconductance (V DS = 10 V, I D = 15 A) (Note 3)
V GS(th)
R DS(on)
g FS
1.0
1.5
5.0
4.1
5.5
3.9
5.5
44
2.0
4.6
6.2
V
mV/ ° C
m W
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
2710
3440
pF
Output Capacitance
Transfer Capacitance
(V DS = 20 V, V GS = 0 V, f = 1.0 MHz)
C oss
C rss
1105
450
1670
640
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(on)
11
22
ns
Rise Time
Turn ? Off Delay Time
Fall Time
(V GS = 10 V, V DD = 10 V,
I D = 40 A, R G = 3.0 W )
t r
t d(off)
t f
39
27
21
80
40
40
Gate Charge
(V GS = 4.5 V, I D = 40 A,
V DS = 10 V) (Note 3)
Q T
Q GS
Q GD
23.6
5.1
11
28
nC
SOURCE ? DRAIN DIODE CHARACTERISTICS
Forward On ? Voltage
Reverse Recovery Time
(I S = 20 A, V GS = 0 V) (Note 3)
(I S = 55 A, V GS = 0 V)
(I S = 20 A, V GS = 0 V, T J = 125 ° C)
V SD
t rr
0.82
0.99
0.65
36.5
1.2
V
ns
(I S = 30 A, V GS = 0 V,
dI S /dt = 100 A/ m s) (Note 3)
t a
t b
30
25
Reverse Recovery Stored Charge
Q rr
0.048
m C
3. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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